This study describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this edition two new fields have been added: crystallization of as-grown low-dimensional ...
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This study describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots and in-growth control of the MBE crystallization process of strained-layer structures.
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Add this copy of Molecular Beam Epitaxy: Fundamentals and Current Status to cart. $18.00, good condition, Sold by Friends of the TorranceLibrary rated 5.0 out of 5 stars, ships from Torrance, CA, UNITED STATES, published 1996 by Springer.
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Good. No dust jacket. Clean pages and tight binding. Sewn binding. Cloth over boards. 453 p. Contains: Illustrations, black & white, Illustrations, color. Springer Series in Materials Science, 7. Audience: General/trade. Thank you for supporting the Friends of the Torrance Library. Your purchase helps us to provide adult and children's programs and new library services.
Add this copy of Molecular Beam Epitaxy: Fundamentals and Current Status to cart. $84.92, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 1997 by Springer Verlag.
