This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors ...
Read More
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
Read Less
Add this copy of Resistive Switching Oxide Materials Mechanisms Devices to cart. $123.18, new condition, Sold by Books International rated 3.0 out of 5 stars, ships from Toronto, ON, CANADA, published 2022 by Springer.
Add this copy of Resistive Switching: Oxide Materials, Mechanisms, to cart. $149.55, like new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2022 by Springer.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
Fine. Trade paperback (US). Glued binding. 383 p. Contains: Illustrations, black & white. Electronic Materials: Science & Technology. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of Resistive Switching: Oxide Materials, Mechanisms, to cart. $149.80, new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2022 by Springer.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
New. Trade paperback (US). Glued binding. 383 p. Contains: Illustrations, black & white. Electronic Materials: Science & Technology. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
