In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required ...
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In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.
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Add this copy of Cmos Front-End Materials and Process Technology: Volume to cart. $17.52, good condition, Sold by Books On The Run rated 5.0 out of 5 stars, ships from Ocala, FL, UNITED STATES, published 2003 by Materials Research Society.
Add this copy of Cmos Front-End Materials and Process Technology: Volume to cart. $20.96, like new condition, Sold by Orca Knowledge Systems, Inc rated 5.0 out of 5 stars, ships from Novato, CA, UNITED STATES, published 2003 by Materials Research Society.
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Fine. Unread. No markings in book. No DJ. From the Table of Contents: Evolution of SOI MOSFETs: From Single Gate to Multiple Gates-Jean-Pierre Coling; Atomistic Simulations of Effect of Coulombic Interactions on Carrier Fluctuations in Doped Silicon-Qin and Dunham; Technique for Source/Drain Elevation Using Implantation Mediated Selective Etching-Huda and Sakamoto; Hybrid Valence Bands in Strained-Layer Heterostructures Grown on Relaxed SiGe Virtual Substrates-Lee and Fitzgerald, etc. 308pp.
