Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance ...
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Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
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Add this copy of MOS (Metal Oxide Semiconductor) Physics and Technology to cart. $223.91, new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2002 by Wiley-Interscience.
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New. This reference explores MOS (Metal Oxide Semiconductors) which are the ceramic semiconductors that are responsible for today's electronic revolution. These materials' ability to hold an electric charge allowed the transistor to replace the vacuum tube and paved the way for the miniaturization of electronic goods. Num Pages: 928 pages, illustrations. BIC Classification: PHFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 157 x 51. Weight in Grams: 1384. 2002. Paperback.....We ship daily from our Bookshop.
comprehensive and authoritative, this book covers the physics of MOS and associated characterization techniques, an invaluable reference for anyone who is working with silicon-metal oxide semiconductor systems