This book brings together the materials science, manufacturing processes, and innovative research and developments of SiGe and strained-Si for the first time in book form. It contains the latest state-of-the-art information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology as well as strain-engineered MOSFETs. The book presents various aspects of silicon heterostructure materials, processes, devices, and applications. It also includes up-to-date research results, a comprehensive list ...
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This book brings together the materials science, manufacturing processes, and innovative research and developments of SiGe and strained-Si for the first time in book form. It contains the latest state-of-the-art information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology as well as strain-engineered MOSFETs. The book presents various aspects of silicon heterostructure materials, processes, devices, and applications. It also includes up-to-date research results, a comprehensive list of seminal references, 300 figures, and 30 tables. The diversity of R&D activities and results presented in this book will undoubtedly spark further development in the field.
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Add this copy of Strained-Si Heterostructure Field Effect Devices to cart. $236.67, like new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2007 by CRC Press.
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Fine. Glued binding. Paper over boards. 436 p. Contains: Illustrations, black & white, Halftones, black & white, Tables, black & white. Materials Science and Engineering. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
