Skip to main content alibris logo

Properties of Lattice-Matched and Strained Indium Gallium Arsenide

by

Write The First Customer Review
Properties of Lattice-Matched and Strained Indium Gallium Arsenide - Bhattacharya, P (Editor)
Filter Results
Shipping
Item Condition
Seller Rating
Other Options
Change Currency

The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, ...

loading
Properties of Lattice-Matched and Strained Indium Gallium Arsenide 2000, Institute of Electrical Engineers of Japan

ISBN-13: 9780863416620

Trade paperback

Properties of Lattice-Matched and Strained Indium Gallium Arsenide 1993, Institution of Electrical Engineers, London, England

ISBN-13: 9780852968659

Hardcover