Covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, this text systematically describes how the fundamental electronic structures and other material properties of the transition and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect ...
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Covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, this text systematically describes how the fundamental electronic structures and other material properties of the transition and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process.
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Add this copy of Nano-CMOS Gate Dielectric Engineering to cart. $131.52, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2011 by CRC Press.
Add this copy of Nano-CMOS Gate Dielectric Engineering to cart. $157.87, like new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2011 by CRC Press.
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Fine. Sewn binding. Cloth over boards. 248 p. Contains: Unspecified, Illustrations, black & white, Tables, black & white. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of Nano-CMOS Gate Dielectric Engineering to cart. $159.46, new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2011 by CRC Press.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
New. Sewn binding. Cloth over boards. 248 p. Contains: Unspecified, Illustrations, black & white, Tables, black & white. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
