The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G ...
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The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
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Add this copy of Microwave High Power High Efficiency Gan Amplifiers for to cart. $168.49, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 2022 by Springer.
