According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between the 1- and 90-nanometer nodes. One of the prime reasons is the low dielectric constant of SiO - thechoice dielectricof all modern electronics. This book presents materials 2 fundamentals of the novel gate dielectrics that are being introduced into semic- ductor manufacturing to ensure the Moore's law scaling of CMOS devices. This is a very rapidly evolving?eld of research and ...
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According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between the 1- and 90-nanometer nodes. One of the prime reasons is the low dielectric constant of SiO - thechoice dielectricof all modern electronics. This book presents materials 2 fundamentals of the novel gate dielectrics that are being introduced into semic- ductor manufacturing to ensure the Moore's law scaling of CMOS devices. This is a very rapidly evolving?eld of research and we try to focus on the basicundersta- ing of structure, thermodynamics, and electronic properties of these materials that determine their performance in the device applications. Thevolume was conceivedin 2001 afteraSymposium on Alternative Gate - electrics we had at the American Physical Society March Meeting in Seattle, upon the suggestion of the Kluwer editor Sabine Freisem. After several discussions we decided that such a bookindeed would be useful as long as we could focus on the fundamental side of the problem and keep the level of the discussion accessible to graduate students andavariety of professionals from different ?elds. The problem of?nding a replacement for SiO asa gate dielectric bringstogether inaunique way 2 many fundamental disciplines. At the same time this problem is truly applied and practical. It looked unlikelythat the perfect new material would be foundfast; rather there would be a series of evolving candidate materialsand approaches.
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Add this copy of Materials Fundamentals of Gate Dielectrics to cart. $159.69, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2011 by Springer.
Add this copy of Materials Fundamentals of Gate Dielectrics to cart. $159.69, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2005 by Springer.
Add this copy of Materials Fundamentals of Gate Dielectrics to cart. $177.20, like new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2005 by Springer.
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Fine. Sewn binding. Cloth over boards. 476 p. Contains: Unspecified. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of Materials Fundamentals of Gate Dielectrics to cart. $177.33, new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2005 by Springer.
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Seller's Description:
New. Sewn binding. Cloth over boards. 476 p. Contains: Unspecified. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.