During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch- Partenkirchen, Germany, in 1971. At the present time, our under- standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. ...
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During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch- Partenkirchen, Germany, in 1971. At the present time, our under- standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta- tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta- tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta- tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
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Add this copy of Ion Implantation in Semiconductors and Other Materials to cart. $103.32, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2012 by Springer.
Add this copy of Ion Implantation in Semiconductors and Other Materials to cart. $33.13, good condition, Sold by BookDepart rated 4.0 out of 5 stars, ships from Shepherdstown, WV, UNITED STATES, published 1973 by Plenum Press.
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UsedGood. Hardcover; proceedings of a conference held at the IBM Thomas J. Watson Res earch Center, Yorktown Heights, New York, December 11-14, 1972; surplus lib rary copy with the usual stampings; reference number taped to spine; bar co de and tape marks on front; fading and shelf wear to exterior; corners bump ed; coffee-colored mark at lower page corners; in good condition with clean text, firm binding. No dust jacket.
Add this copy of Ion Implantation in Semiconductors and Other Materials to cart. $49.83, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 1973 by Plenum Publishing Corporation.
