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Impact of Spacer Engineering on Performance of Junctionless Transistor

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Impact of Spacer Engineering on Performance of Junctionless Transistor - Kaur, Prabhjot, and Gill, Sandeep Singh, and Kaur, Navneet
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The scaling of traditional planar CMOS devices is becoming difficult due to increasing gate leakage and subthreshold leakage. Multigate FETs have been proposed to overcome the limitations associated with the scaling of traditional CMOS devices below 100nm region. The multiple electrically coupled gates and the thin silicon body suppress the short-channel effects, thereby lowering the subthreshold leakage current in a multi-gate MOSFET. However, fabrication complexity increases for inversion mode (IM) FinFET devices due to ...

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Impact of Spacer Engineering on Performance of Junctionless Transistor 2019, LAP Lambert Academic Publishing

ISBN-13: 9786139455560

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