Both the theoretical and experimental studies on the impact ionization phenomena under electric and magnetic fields are the primary subject matter of this book. Detailed theoretical modelling of impact ionization phenomena and consequent breakdown of a p-n junction have been presented. The theories discussed in this book are validated by using appropriate experimental measurements. The 4H-SiC has been chosen as the semiconductor material for the experimental studies. However, the theories and models presented in this book ...
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Both the theoretical and experimental studies on the impact ionization phenomena under electric and magnetic fields are the primary subject matter of this book. Detailed theoretical modelling of impact ionization phenomena and consequent breakdown of a p-n junction have been presented. The theories discussed in this book are validated by using appropriate experimental measurements. The 4H-SiC has been chosen as the semiconductor material for the experimental studies. However, the theories and models presented in this book are valid for any semiconductor material.
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Add this copy of Impact Ionization in Presence of Electric and Magnetic to cart. $37.01, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2020 by LAP Lambert Academic Publishing.
