Defects in Silicon: Proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-Mrs Conference, Strasbourg, France, 30 May-2 June 1989
Defects in Silicon: Proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-Mrs Conference, Strasbourg, France, 30 May-2 June 1989
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, ...
Read More
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Read Less
Add this copy of Defects in Silicon: Proceedings of Symposium B on to cart. $46.44, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 1989 by North-Holland.
