The problem of the formation of interstitial atom clusters in Si and Ge crystals is treated in order to present useful results for the understanding of problems which may arise after implatation, thermal gettering, and thermal treatment of Si and Ge wafers of crystals.
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The problem of the formation of interstitial atom clusters in Si and Ge crystals is treated in order to present useful results for the understanding of problems which may arise after implatation, thermal gettering, and thermal treatment of Si and Ge wafers of crystals.
Read Less
Add this copy of Clusters of Interstitial Atoms in Silicon and Germanium to cart. $19.50, new condition, Sold by Scholars Attic rated 5.0 out of 5 stars, ships from Lake Barrington, IL, UNITED STATES, published 1994 by Wiley-VCH Verlag GmbH.
Add this copy of Clusters of Interstitial Atoms in Silicon and Germanium to cart. $52.47, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 1994 by Wiley-VCH.