Continuous downscaling of MOSFET devices, below sub 100 nm, has led to many challenges in the field of VLSI. Few interesting challenging problems addressed in this book are: MOSFET parameter extraction, Automatic circuit design, and Design of circuits in novel device structures. The increasing complexity of MOSFET models to capture various SCEs has made the parameter extraction a difficult task. Analog circuit design has also become difficult due to increased complexity of MOSFET models, process variations, supply voltage ...
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Continuous downscaling of MOSFET devices, below sub 100 nm, has led to many challenges in the field of VLSI. Few interesting challenging problems addressed in this book are: MOSFET parameter extraction, Automatic circuit design, and Design of circuits in novel device structures. The increasing complexity of MOSFET models to capture various SCEs has made the parameter extraction a difficult task. Analog circuit design has also become difficult due to increased complexity of MOSFET models, process variations, supply voltage variations, and need of low-power architectures. FinFET device, which has less SCEs, is emerging as a strong candidate to replace planar MOSFETs. However, compact models for FinFETs are still under research and not available for circuit simulation. This book demonstrates potential applications of evolutionary algorithms such as PSO algorithm to address the issues of MOSFET parameter extraction and automatic circuit design. It also highlights the use of look-up table (LUT) approach for simulation of circuits in novel devices. This book will be useful to students, researchers, and practitioners working in CMOS circuits and devices.
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