Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance ...
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Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
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Add this copy of MOS (Metal Oxide Semiconductor) Physics and Technology to cart. $344.00, like new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2002 by Wiley-Interscience.
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Add this copy of Mos (Metal Oxide Semiconductor) Physics and Technology to cart. $344.01, good condition, Sold by Bulk Book Warehouse rated 5.0 out of 5 stars, ships from Rotterdam, NY, UNITED STATES, published 2002 by Wiley-Interscience.
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Good. Shows minimal wear such as frayed or folded edges, minor rips and tears, and/or slightly worn binding. May have stickers and/or contain inscription on title page. No observed missing pages.
Add this copy of Mos (Metal Oxide Semiconductor) Physics and Technology to cart. $25.00, good condition, Sold by HPB-Red rated 5.0 out of 5 stars, ships from Dallas, TX, UNITED STATES, published 1982 by Wiley-Interscience.
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Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority!
Add this copy of Mos (Metal Oxide Semiconductor) Physics and Technology to cart. $55.66, good condition, Sold by HPB-Red rated 5.0 out of 5 stars, ships from Dallas, TX, UNITED STATES, published 1982 by Wiley-Interscience.
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Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority!
Add this copy of Mos Physics and Technology to cart. $244.51, fair condition, Sold by True Oak Books rated 5.0 out of 5 stars, ships from Highland, NY, UNITED STATES, published 1982 by John Wiley & Sons.
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Fair with no dust jacket. Metal Oxide Semiconductor; 906 pages; Graphs. Name inscription on title page. Heavy foxing to the exterior edges of textblock. Very Good condition otherwise. No other noteworthy defects. No markings on text.; -Your satisfaction is our priority. We offer free returns and respond promptly to all inquiries. Your item will be carefully cushioned in bubble wrap and securely boxed. All orders ship on the same or next business day. Buy with confidence.
Add this copy of Mos (Metal Oxide Semiconductor) Physics and Technology to cart. $245.01, good condition, Sold by HPB-Red rated 5.0 out of 5 stars, ships from Dallas, TX, UNITED STATES, published 1982 by Wiley-Interscience.
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Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority!
comprehensive and authoritative, this book covers the physics of MOS and associated characterization techniques, an invaluable reference for anyone who is working with silicon-metal oxide semiconductor systems
